2.5D EM SMALL-SIGNAL ANALYSIS OF MESFETS AND HEMTS TAKING INTO ACCOUNT THE FULL DEVICE METALLIZATION GEOMETRY

Authors
JOHN A JANSEN RH
Citation
A. John et Rh. Jansen, 2.5D EM SMALL-SIGNAL ANALYSIS OF MESFETS AND HEMTS TAKING INTO ACCOUNT THE FULL DEVICE METALLIZATION GEOMETRY, Microwave and optical technology letters, 9(4), 1995, pp. 180-183
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
9
Issue
4
Year of publication
1995
Pages
180 - 183
Database
ISI
SICI code
0895-2477(1995)9:4<180:2ESAOM>2.0.ZU;2-7
Abstract
The full-wave electromagnetic (EM) spectral-domain approach so far app lied to predominantly planar (2.5D) passive MIC / M MIC structures has been extended to the rigorous EM treatment of active devices like MES FETs/HEMTs incorporating the full metallization geometry. The presente d approach is verified with a 1 x 300-mu m GaAs MESFET application exa mple. (C) 1995 John Wiley and Sons, Inc.