A RELATIONSHIP BETWEEN A METAL WORK FUNCTION AND A DIFFUSION POTENTIAL AT SCHOTTKY BARRIERS IN PHOTOVOLTAIC CELLS BASED ON A MOLECULAR SEMICONDUCTOR

Authors
HARIMA Y KODAKA T OKAZAKI H KUNUGI Y YAMASHITA K ISHII H SEKI K
Citation
Y. Harima et al., A RELATIONSHIP BETWEEN A METAL WORK FUNCTION AND A DIFFUSION POTENTIAL AT SCHOTTKY BARRIERS IN PHOTOVOLTAIC CELLS BASED ON A MOLECULAR SEMICONDUCTOR, Chemical physics letters, 240(4), 1995, pp. 345-350
Citations number
26
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
Chemical physics letters → ACNP
ISSN journal
00092614
Volume
240
Issue
4
Year of publication
1995
Pages
345 - 350
Database
ISI
SICI code
0009-2614(1995)240:4<345:ARBAMW>2.0.ZU;2-Q
Abstract
A Schottky-Mott rule is examined for the molecular solids of zinc(II) tetraphenylporphyrin (ZnTPP) contacting various metals in order to cla rify an influence of surface states on formation of the Schottky barri ers. For the same purpose, photocurrents due to the ZnTPP/metal contac ts are compared with those observed for the Al/ZnTPP/Au cell biased at different voltages. As a result, the Schottky barrier formation at th e contacts is found to be hardly influenced by the surface states, if any, attributable to the ZnTPP solids. It is also found that the Fermi level of the ZnTPP solid lies 4.9 eV below the vacuum level.