REACTION-ENGINEERING MODELING OF LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF NB2O5 THIN-FILM

Citation
Sc. Jung et al., REACTION-ENGINEERING MODELING OF LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF NB2O5 THIN-FILM, JPN J A P 2, 34(6B), 1995, pp. 775-778
Citations number
12
Categorie Soggetti
Physics, Applied
Volume
34
Issue
6B
Year of publication
1995
Pages
775 - 778
Database
ISI
SICI code
Abstract
Thin films of niobium oxide (V) were prepared by low-pressure metalorg anic chemical vapor deposition (LPMOCVD) from bis-dipivaloylmethanate niobium trichloride in a horizontal tube hot-wall reactor. The depende nce of growth rate, crystal orientation, morphology and chemical compo sition on operating conditions were studied experimentally. The profil e of the thin film grown on microscale trenches and the macroscopic gr owth rate distribution in the reactor were studied by micro/macro-nume rical simulations.