CADMIUM SELENIDE - AMORPHOUS HYDROGENATED SILICON HETEROSTRUCTURES

Authors
WU S HANEMAN D
Citation
S. Wu et D. Haneman, CADMIUM SELENIDE - AMORPHOUS HYDROGENATED SILICON HETEROSTRUCTURES, Applied surface science, 89(3), 1995, pp. 289-295
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
89
Issue
3
Year of publication
1995
Pages
289 - 295
Database
ISI
SICI code
0169-4332(1995)89:3<289:CS-AHS>2.0.ZU;2-O
Abstract
Heterojunctions have been fabricated between CdSe films made by vacuum evaporation and amorphous hydrogenated Si films deposited by plasma d ischarge. With adjusted conditions, junctions of good rectification ra tios have been produced (1000:1 at 2 V), although showing significant interface states. The band offsets were determined by an internal phot oemission technique as 0.06 eV for the valence bands and 0.02 eV for t he conduction bands. A small unoptimised solar cell gave near 7% effic iency.