VISIBLE PHOTOLUMINESCENCE FROM SIOX FILMS GROWN BY LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

a-SiOx films of varying stoichiometry have been prepared by low temper ature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energie s ranging from the ultraviolet to the near infrared have been observed . PL,infrared and X-ray diffraction on selected samples indicate forma tion of Si clusters in the films. The effects of annealing on the PL p roperties of the films have been found to depend on initial stoichiome try of the films.