EXPERIMENTAL EXTRACTION OF LIGHT CONFINEMENT PARAMETERS FOR TEXTURED SILICON-WAFERS

Citation
I. Tobias et al., EXPERIMENTAL EXTRACTION OF LIGHT CONFINEMENT PARAMETERS FOR TEXTURED SILICON-WAFERS, Progress in photovoltaics, 3(3), 1995, pp. 177-187
Citations number
10
Categorie Soggetti
Energy & Fuels","Physics, Applied
Journal title
ISSN journal
10627995
Volume
3
Issue
3
Year of publication
1995
Pages
177 - 187
Database
ISI
SICI code
1062-7995(1995)3:3<177:EEOLCP>2.0.ZU;2-A
Abstract
A procedure for extracting the internal reflectivities and the mean ti lt angle of light rays inside silicon wafers from reflectance measurem ents is presented. The procedure, based on a simple model of light con finement, is applied to silicon wafers textured with random pyramids. The results obtained are shown to be in good agreement with ray-tracin g calculations and theoretical estimates.