MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-T-C BI-SR-CA-CU-O FILMS

Molecular beam epitaxy (MBE) has been used to grow high-temperature su perconducting Bi-Sr-Ca-Cu-O films with adequate control over growth of number of unit layers. Oxide sources of Sr and Ca used for electron b eam evaporation have been found to be useful for epitaxial growth of f ilms. Deposited films show superconducting properties comparable to fi lms deposited by using pure metals with a complicated in situ oxidatio n technique. Optimum deposition and annealing conditions have been obt ained to grow c-axis-oriented 2212 phase BSCCO film. In situ reflectio n high-energy electron diffraction (RHEED) study of the films has reve aled the growth of epitaxial films with atomically smooth surfaces.