CONTINUOUS-WAVE OPERATION UP TO 36-DEGREES-C OF 1.3-MU-M GAINASP-INP VERTICAL-CAVITY SURFACE-EMITTING LASERS

We introduced ion-beam assisted deposition in order to improve the qua lity of Al2O3 and SiO2, which were used as part of the mirrors of 1.3- mu m GaInAsP-InP vertical-cavity surface-emitting lasers (VCSEL's), Th e refractive index of Al2O3 was improved to 1.63 from 1.56 and the one of SiO2 increased to 1.47 from 1.45, Low-threshold room-temperature c ontinuous-wave (CW) operation of 1.3-mu m VCSEL with the improved mirr ors was demonstrated, The threshold current was 2.4 mA at 20 degrees C , The CW operating temperature was raised to 36 degrees C, which is a record high temperature for 1.3-mu m VCSEL.