INASSBP-INASSB-INAS DIODE-LASERS EMITTING AT 3.2-MU-M GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
WU D KAAS E DIAZ J LANE B RYBALTOWSKI A YI HJ RAZEGHI M
Citation
D. Wu et al., INASSBP-INASSB-INAS DIODE-LASERS EMITTING AT 3.2-MU-M GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE photonics technology letters, 9(2), 1997, pp. 173-175
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
2
Year of publication
1997
Pages
173 - 175
Database
ISI
SICI code
1041-1135(1997)9:2<173:IDEA3G>2.0.ZU;2-H
Abstract
InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High -output powers of 660 mW in pulse mode and 300 mW in continuous wave o peration with 400-mu m cavity length and 100-mu m-wide aperture at 78 K have been obtained, These devices showed low threshold current densi ty of 40 A/cm(2), low internal loss of 3.0 cm(-1), far-field theta(per pendicular to) of 34 degrees with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.