INFLUENCE OF PHOTON REABSORPTION ON THE TRANSFER EFFICIENCY OF OUTPUTINTENSITY IN SEMICONDUCTOR MICROCAVITIES

Authors
NISHIKAWA T YOKOTA M NAKAMURA S KADOYA Y YAMANISHI M
Citation
T. Nishikawa et al., INFLUENCE OF PHOTON REABSORPTION ON THE TRANSFER EFFICIENCY OF OUTPUTINTENSITY IN SEMICONDUCTOR MICROCAVITIES, IEEE photonics technology letters, 9(2), 1997, pp. 179-181
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
2
Year of publication
1997
Pages
179 - 181
Database
ISI
SICI code
1041-1135(1997)9:2<179:IOPROT>2.0.ZU;2-4
Abstract
Photon reabsorption effect on the transfer efficiency beta(t) of half- wavelength semiconductor microcavities was investigated by examining t he excitation intensity dependence of the output light intensity, It i s shown that beta(t) increases under intense excitation, and approache s to over-all spontaneous emission coupling coefficient beta(o), as a result of the elimination of photon reabsorption, The results clearly demonstrate that the photon reabsorption is the predominant mechanism of the suppression of beta(t) at weak excitation, especially in the ca se of half-wavelength high-Q cavities.