GROWTH OF BURIED SIO2 LAYERS IN SI BY THERMAL-OXIDATION - THERMODYNAMIC MODEL

Authors
GOSELE U SCHROER E HUH JY
Citation
U. Gosele et al., GROWTH OF BURIED SIO2 LAYERS IN SI BY THERMAL-OXIDATION - THERMODYNAMIC MODEL, Applied physics letters, 67(2), 1995, pp. 241-243
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
2
Year of publication
1995
Pages
241 - 243
Database
ISI
SICI code
0003-6951(1995)67:2<241:GOBSLI>2.0.ZU;2-V