HIGH-QUALITY SI1-X-YGEXCY EPITAXIAL LAYERS GROWN ON (100) SI BY RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE

Authors
MI J WARREN P LETOUMEAU P JUDELEWICZ M GAILHANOU M DUTOIT M DUBOIS C DUPUY JC
Citation
J. Mi et al., HIGH-QUALITY SI1-X-YGEXCY EPITAXIAL LAYERS GROWN ON (100) SI BY RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE, Applied physics letters, 67(2), 1995, pp. 259-261
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
2
Year of publication
1995
Pages
259 - 261
Database
ISI
SICI code
0003-6951(1995)67:2<259:HSELGO>2.0.ZU;2-C