ON-WAFER CHARACTERIZATION OF IN0.52AL0.48AS IN0.53GA0.47 AS MODULATION-DOPED FIELD-EFFECT TRANSISTOR WITH 4.2 PS SWITCHING TIME AND 3.2 PS DELAY/

Authors
ZENG A JACKSON MK VANHOVE M DERAEDT W
Citation
A. Zeng et al., ON-WAFER CHARACTERIZATION OF IN0.52AL0.48AS IN0.53GA0.47 AS MODULATION-DOPED FIELD-EFFECT TRANSISTOR WITH 4.2 PS SWITCHING TIME AND 3.2 PS DELAY/, Applied physics letters, 67(2), 1995, pp. 262-263
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
2
Year of publication
1995
Pages
262 - 263
Database
ISI
SICI code
0003-6951(1995)67:2<262:OCOIIA>2.0.ZU;2-M