ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X

A method calculating detailed electronic properties of the anionic and cationic pseudobinary InxGa1-xSb and InAsxSb1-x semiconductor alloys is presented. The technique begins with realistic band structures obta ined for the constituent compounds by fitting the band-gap symmetry-po int energies to experimental data within the pseudopotential scheme. T hen the virtual crystal approximation which incorporates compositional disordered as an effective potential is used to calculate the alloys band structures and charge densities. Detailed comparison between the theoretical predictions and experimental data demonstrate the quantita tive nature of the method. Bowing parameters for the Gamma, X, and L g aps are in good agreement with the experimental results.