N. Bouarissa et al., ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X, Infrared physics & technology, 36(4), 1995, pp. 755-761
A method calculating detailed electronic properties of the anionic and
cationic pseudobinary InxGa1-xSb and InAsxSb1-x semiconductor alloys
is presented. The technique begins with realistic band structures obta
ined for the constituent compounds by fitting the band-gap symmetry-po
int energies to experimental data within the pseudopotential scheme. T
hen the virtual crystal approximation which incorporates compositional
disordered as an effective potential is used to calculate the alloys
band structures and charge densities. Detailed comparison between the
theoretical predictions and experimental data demonstrate the quantita
tive nature of the method. Bowing parameters for the Gamma, X, and L g
aps are in good agreement with the experimental results.