COMPENSATING CORNER UNDERCUTTING IN ANISOTROPIC ETCHING OF (100) SILICON FOR CHIP SEPARATION

Authors
SCHEIBE C OBERMEIER E
Citation
C. Scheibe et E. Obermeier, COMPENSATING CORNER UNDERCUTTING IN ANISOTROPIC ETCHING OF (100) SILICON FOR CHIP SEPARATION, Journal of micromechanics and microengineering, 5(2), 1995, pp. 109-111
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
5
Issue
2
Year of publication
1995
Pages
109 - 111
Database
ISI
SICI code
0960-1317(1995)5:2<109:CCUIAE>2.0.ZU;2-M
Abstract
This paper deals with the compensation of convex corner undercutting d uring anisotropic etching of [100]-oriented silicon wafers in aqueous KOH With respect to micromachined devices. Several compensation struct ures are examined focusing on the etching of two intersecting [110]-or iented V-grooves formed by {111}-planes. A novel structure with reduce d spatial requirements is shown. Using this structure, crossing V-groo ves for chip separation are realized.