CHARACTERIZATION OF SOL-GEL PZT FILMS ON PT-COATED SUBSTRATES

A conventional sol-gel process was used to spin-cast PZT films on oxid ized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films show ed different textures and surface morphologies, depending on whether o r not a Ti adhesion layer was used. If a Ti layer was present, Ti diff usion into and through the Pt film leads to a compound Pt3Ti, which fa cilitates crystallization of the perovskite PZT phase; without Ti, cry stallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT fil ms have been measured; the first results indicate high dielectric cons tants (epsilon similar or equal to 480) and acceptable ferroelectric b ehaviour.