Q-FACTOR DEPENDENCE OF ONE-PORT ENCAPSULATED POLYSILICON RESONATOR ONREACTIVE SEALING PRESSURE

Citation
Cq. Gui et al., Q-FACTOR DEPENDENCE OF ONE-PORT ENCAPSULATED POLYSILICON RESONATOR ONREACTIVE SEALING PRESSURE, Journal of micromechanics and microengineering, 5(2), 1995, pp. 183-185
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
ISSN journal
09601317
Volume
5
Issue
2
Year of publication
1995
Pages
183 - 185
Database
ISI
SICI code
0960-1317(1995)5:2<183:QDOOEP>2.0.ZU;2-C
Abstract
Micromachined encapsulated polysilicon resonators have been fabricated in different reactive sealing pressure, 200, 50 and 20 mTorr, in orde r to investigate the dependence of the Q-factors on the sealing pressu re. Q-factors as high as 2700 have been measured. The experimental res ults show that the Q-factors of one-port encapsulated resonators are p roportional to 1/p and the resonant frequency is independent of the se aling pressure. However, the measured Q-factors are more than two orde rs of magnitude lower than theoretical prediction.