PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SI-N-C-H FILMS FROM ENVIRONMENTALLY BENIGN ORGANOSILANES

The environmentally benign precursors diethylsilane (DES) and di-t-but ylsilane were used with NH3 to synthesize hydrogenated silicon carboni tride films by plasma enhanced chemical vapor deposition. The growth k inetics and film properties were examined as a function of deposition temperature, pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosil ane ratio while increasing with higher total pressure. Values of index of refraction, stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and re sulting film compositions. Oxidation of the films was noted to occur a t low deposition temperatures, low NH3/organosilane ratios, and high p ressures. Carbon was present in all deposits and decreased slightly wi th higher NH3/organosilane flow ratios.