OPTICAL GAIN CALCULATION OF WURTZITE GAN ALGAN QUANTUM-WELL LASER/

Optical gain properties of wurtzite GaN/Al0.2Ga0.8N quantum well laser s are theoretically analyzed using physical parameters from ab initio calculations for the first time. The valence band of wurtzite GaN exhi bits strong non-paraboticity, and the hole density of states is signif icantly large in comparison with the conventional zincblende crystals. This valence band feature causes high transparency cartier density of 7.5 x 10(18) cm(-3) in the 50 Angstrom thick GaN quantum well. This r esult predicts that the threshold current of wurtzite GaN/AlGaN quantu m well laser is higher than the conventional lasers with zincblende cr ystals.