SYNCHROTRON-RADIATION-EXCITED GROWTH OF ZNTE BY ALTERNATING GAS-SUPPLY USING METALORGANIC SOURCES

Crystal growth of ZnTe has been studied using synchrotron radiation as a light source, by the atomic layer epitaxial technique, i.e., by sup plying diethylzinc and diethyltelluride alternately. ZnTe film with ex cellent thickness uniformity is grown epitaxially on the (100) GaAs su bstrate at room temperature. It has been confirmed by X-ray photoelect ron spectroscopy that no carbon is included in the ZnTe film. The grow th rate becomes almost saturated at one monolayer per cycle.