MICROTWIN NUCLEATION AND PROPAGATION IN HETEROEPITAXIAL II-VI COMPOUNDS ON (001)-ORIENTED GAAS SUBSTRATES

Authors
BROWN PD LOGINOV YY STOBBS WM HUMPHREYS CJ
Citation
Pd. Brown et al., MICROTWIN NUCLEATION AND PROPAGATION IN HETEROEPITAXIAL II-VI COMPOUNDS ON (001)-ORIENTED GAAS SUBSTRATES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(1), 1995, pp. 39-57
Citations number
38
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties → ACNP
ISSN journal
01418610
Volume
72
Issue
1
Year of publication
1995
Pages
39 - 57
Database
ISI
SICI code
0141-8610(1995)72:1<39:MNAPIH>2.0.ZU;2-W
Abstract
II-VI(001)GaAs heterostructures showing strong microtwin anisotropy fo r conditions of tensile and compressive strain are examined. Epitaxial ZnS/GaAs, (Cd,Zn)Te/GaAs and (Cd,Zn)S/GaAs exhibit microtwins exclusi vely for the [1 (1) over bar 0] projection, when far from the interfac e, indicating that a growth model is most appropriate for the descript ion of microtwin propagation in these cases. Profile imaging is used t o examine the first stages of twinning in (Hg,Mn)Te. The importance of interface integrity when distinguishing between processes of growth- and deformation-induced microtwinning is emphasized.