CURRENT SCALING AND ELECTRON HEATING BETWEEN INTEGER QUANTUM HALL PLATEAUS IN GAAS ALXGA1-XAS HETEROSTRUCTURES/

Authors
SCHERER H SCHWEITZER L AHLERS FJ BLIEK L LOSCH R SCHLAPP W
Citation
H. Scherer et al., CURRENT SCALING AND ELECTRON HEATING BETWEEN INTEGER QUANTUM HALL PLATEAUS IN GAAS ALXGA1-XAS HETEROSTRUCTURES/, Semiconductor science and technology, 10(7), 1995, pp. 959-964
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
7
Year of publication
1995
Pages
959 - 964
Database
ISI
SICI code
0268-1242(1995)10:7<959:CSAEHB>2.0.ZU;2-D
Abstract
The current- and temperature-dependent broadening of the resistivity p eaks in the region between adjacent quantum Hall plateaus is measured in two different GaAs/Al(x)Gal(1-x)As samples. Power law behaviour is found for temperature and current scaling. Combining both results, a r elation for the current-density-dependent effective electron temperatu re can be extracted. We find T-e similar to j(alpha) with a current he ating exponent alpha approximate to 0.5.