RESONANT CAVITY-ENHANCED (RCE) PHOTODETECTOR BASED ON GA(IN)SB FOR GAS-SENSING APPLICATIONS

Authors
MANSOOR F HAYWOOD SK MASON NJ NICHOLAS RJ WALKER PJ GREY R HILL G
Citation
F. Mansoor et al., RESONANT CAVITY-ENHANCED (RCE) PHOTODETECTOR BASED ON GA(IN)SB FOR GAS-SENSING APPLICATIONS, Semiconductor science and technology, 10(7), 1995, pp. 1017-1021
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
7
Year of publication
1995
Pages
1017 - 1021
Database
ISI
SICI code
0268-1242(1995)10:7<1017:RC(PBO>2.0.ZU;2-F
Abstract
Resonant cavity-enhanced (RCE) detectors based on the GaSb material sy stem have been demonstrated for the first time. Calculations show that there is a four-fold increase in the external quantum efficiency for an RCE detector over a conventional non-resonant structure. The back m irror is formed by an 18-period GaAs/AlAs quarter-wave stack with the front reflector being the air-semiconductor interface and the absorber region being bulk GaSb. Optical spectra show the resonant wavelength to be at 1748 nm and the observed enhancement in the photocurrent show s a four-fold increase over a non-resonant structure.