BANDWIDTH ENHANCEMENT AND BROAD-BAND NOISE-REDUCTION IN INJECTION-LOCKED SEMICONDUCTOR-LASERS

Injection locking of a semiconductor laser can significantly improve t he broadband modulation characteristics. By adjusting the frequency of fset between the master laser and the slave laser, improved modulation bandwidth or flatness of the modulation response can be emphasized. T he improved modulation characteristics are accompanied by reduced broa d-band relative intensity noise, Our calculations predict that the par asitic-free modulation bandwidths can be enhanced above the theoretica l limit for the free-running laser.