CHARACTERIZATION OF THIN P-CLAD INGAAS SINGLE-QUANTUM-WELL LASERS

Low-ridge, thin p-dad InGaAs single-quantum-well (SQW) lasers with shi ny Bu contacts have been fabricated using a pulsed anodic oxidation te chnique Although the ridge is very low (130 nm), the lateral refractiv e index step is sufficiently large to provide strong lateral waveguidi ng. Pulsed current measurements of threshold current, operating wavele ngth, and lateral far field as a function of ridge width are presented and compared with measured values reported for low-ridge and oxide-de fined lasers fabricated from conventional thick p-clad material. The C W performance characteristics of five-micron-wide, low-ridge, thin p-c lad lasers are shown to be comparable to those of conventional InGaAs SQW high-ridge waveguide lasers.