VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES WITH POSTGROWTH WAVELENGTH ADJUSTMENT

Authors
WIPIEJEWSKI T PETERS MG HEGBLOM ER COLDREN LA
Citation
T. Wipiejewski et al., VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES WITH POSTGROWTH WAVELENGTH ADJUSTMENT, IEEE photonics technology letters, 7(7), 1995, pp. 727-729
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
7
Year of publication
1995
Pages
727 - 729
Database
ISI
SICI code
1041-1135(1995)7:7<727:VSLWPW>2.0.ZU;2-5
Abstract
A novel vertical cavity surface-emitting laser design enables the post -growth determination of the emission wavelength. The lasers employ a hybrid top mirror consisting of a semiconductor Bragg mirror and a met al reflector. The laser cavity length of each element in a 2-D array c an be precisely adjusted after epitaxial growth by anodic oxidation an d etching. An emission wavelength range of 25 nm is experimentally obs erved. Lasers operate under continuous wave conditions with threshold currents of about 6 mA and output powers up to 0.5 mW.