HIGH-FIELD POLING OF ELECTROOPTIC ETALON MODULATORS ON CMOS INTEGRATED-CIRCUITS

Reflection etalon modulators with electrooptic polymer layers as the s pacer have been fabricated on the surface of a CMOS chip and successfu lly poled under a de electric field at 80 V/mu m. This is the first de monstration that such etalons can be fabricated on finished VLSI circu its and poled successfully without damage to the electronics while con nected to the underlying circuitry, Such modulators, fabricated on the surface of integrated circuits, have potential applications In areas such as optical communication and free-space interconnects for multipr ocessors.