FABRICATION OF LOW-TEMPERATURE PECVD CHANNEL WAVE-GUIDES WITH SIGNIFICANTLY IMPROVED LOSS IN THE 1.50-1.55-MU-M WAVELENGTH RANGE

Citation
Mv. Bazylenko et al., FABRICATION OF LOW-TEMPERATURE PECVD CHANNEL WAVE-GUIDES WITH SIGNIFICANTLY IMPROVED LOSS IN THE 1.50-1.55-MU-M WAVELENGTH RANGE, IEEE photonics technology letters, 7(7), 1995, pp. 774-776
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
7
Issue
7
Year of publication
1995
Pages
774 - 776
Database
ISI
SICI code
1041-1135(1995)7:7<774:FOLPCW>2.0.ZU;2-I
Abstract
By excluding nitrogen-containing gases from the deposition process, si lica-based waveguides have been fabricated by PECVD at low temperature with a propagation loss less than 0.2 dB/cm in the 1.50-1.55-mu m wav elength range. PECVD is performed in a high-plasma-density hollow cath ode system from a mixture of oxygen and silane. Carbon tetrafluoride i s used as a fluorine dopant to depress the refractive index in the buf fer and cladding layers. A controllable refractive index change in the range 0.004-0.02 can be obtained.