GENERALIZED DEFECT ANNIHILATION KINETICS FOR STRUCTURAL RELAXATION INAMORPHOUS-SILICON

Authors
SHIN JH ATWATER HA
Citation
Jh. Shin et Ha. Atwater, GENERALIZED DEFECT ANNIHILATION KINETICS FOR STRUCTURAL RELAXATION INAMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(1), 1995, pp. 1-11
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties → ACNP
ISSN journal
09586644
Volume
72
Issue
1
Year of publication
1995
Pages
1 - 11
Database
ISI
SICI code
0958-6644(1995)72:1<1:GDAKFS>2.0.ZU;2-4
Abstract
A general approach to the dynamics of structural relaxation in amorpho us silicon is developed. A form is chosen for the recombination kineti cs of defects which removes the ad-hoc assumption made in previous app roaches, namely that defects recombine only with others of identical a ctivation energy. The generalized approach is tested quantitatively by modelling the structural relaxation of amorphous silicon and comparin g the results with the experimental data. It is found that the general ized recombination kinetics formalism is necessary in order to describ e accurately the time-resolved relaxation data.