INTERFACE AND STRUCTURAL DISORDER CHANGES IN SE CDSE MULTILAYERS/

The constant photocurrent method and small-angle X-ray diffraction hav e been used in order to study the changes in the interfaces of Se/CdSe multilayers as well as in the structural disorder of CdSe sublayers a fter annealing. An improvement of the interface quality accompanied by a decrease of the Urbach edge parameter E(U) has been found after ann ealing the multilayers with sublayer thicknesses smaller than 5 nm at T-a < 360 K. An E(U) increase accompanied by a deterioration of the in terface quality has been obtained after annealing at T-a > 360 K. In t he multilayers with sublayer thickness of 10 nm, a monotonous increase of E(U) has been observed. In addition, the photoconductivity of all specimens has been increased after annealing at T-a > 350 K. Crystalli zation has not been observed. Phase separation, Cd atomic diffusion in to the Se sublayers and structural disorder changes in the CdSe sublay ers have been considered as possible reasons for the complicated alter ations in the multilayers after annealing.