ION-BEAM-ASSISTED SPUTTER-DEPOSITION OF YSZ BUFFER LAYERS FOR SUPERCONDUCTING INTERCONNECT APPLICATIONS

Citation
G. Florence et al., ION-BEAM-ASSISTED SPUTTER-DEPOSITION OF YSZ BUFFER LAYERS FOR SUPERCONDUCTING INTERCONNECT APPLICATIONS, Superconductor science and technology, 8(7), 1995, pp. 546-551
Citations number
9
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
ISSN journal
09532048
Volume
8
Issue
7
Year of publication
1995
Pages
546 - 551
Database
ISI
SICI code
0953-2048(1995)8:7<546:ISOYBL>2.0.ZU;2-X
Abstract
Yttria-stabilized zirconia (YSZ) buffer layers have been sputter depos ited onto various substrates including silicon and nickel alloy using ion-beam-assisted deposition (IBAD). This technique resulted in the fo rmation of buffer layers which exhibit strong (100) phase growth as we ll as in-plane orientation as evidenced by x-ray diffraction measureme nts. Subsequent YBCO depositions on these films exhibit T-c values of 86 K and strong biaxial texture with the c axis normal to the surface. With further refinement, this technique may be used to fabricate the multilayer substrate structure needed for superconducting multichip mo dules.