193-NM LITHOGRAPHY AT MIT LINCOLN LAB

Citation
M. Hibbs et al., 193-NM LITHOGRAPHY AT MIT LINCOLN LAB, Solid state technology, 38(7), 1995, pp. 69
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
38
Issue
7
Year of publication
1995
Database
ISI
SICI code
0038-111X(1995)38:7<69:1LAMLL>2.0.ZU;2-6
Abstract
Over the past 20 years, the image-resolution capability of optical lit hography has progressed from 2 mu m to better than 0.5 mu m. This rema rkable advance was made possible by improved lens quality, lenses of i ncreased numerical aperture (NA), and the use of shorter exposure wave lengths. Currently, wavelengths of 365 or 248 nm are used for imaging minimum feature sizes, but as dimensional requirements on features dro p below 0.25 mu m in the next few years, it will be necessary to consi der the use of even shorter exposure wavelengths. One obvious candidat e, 193 nm, happens to be the emission wavelength of the argon fluoride excimer laser.