INTEGRATED CVD TITANIUM AND TITANIUM NITRIDE PROCESSES FOR SUB-0.5-MU-M METALLIZATION

An integrated process for chemical vapor deposition (CVD) of titanium (Ti) and titanium nitride (TiN) layers has been developed in which the Ti process provides a uniform titanium silicide layer over silicon so urce, drain, and gate regions, while the TiN process provides a confor mal diffusion barrier over high-aspect-ratio features. Integrating the CVD-Ti and CVD-TiN processes with an existing CVD-tungsten (W) proces s provides a high-quality metallization module for devices with high-a spect-ratio features at a low cost relative to collimated sputtering. The integrated CVD process has been used to form sub-0.5-mu m test str uctures as well as prime memories.