INVESTIGATION OF A PD-AU COMPLEX IN N-TYPE SILICON WITH DLTFS TECHNIQUES

The properties of a Pd-Au complex in n-type Si are investigated by DLT FS (deep level transient Fourier spectroscopy) techniques. In n-type S i the energy level of the Pd-Au complex is slightly shifted with isoch ronal annealing and does not display stable properties. The defect rea ction of Pd-Au is explained by an ''enhanced kick-out'' mechanism repr esented by the reaction equation Au-i + Pd-s --> Au-s + Pd-i, where in terstitially diffusing gold replaces substitutional palladium. This re action is similar to the Au-Rh defect reaction. The results of the inv estigations of the properties of the Pd-Au complex in p-type Si will b e published later.