INAS GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN ON GAAS AS SPATIAL LIGHT MODULATORS - UNIFORMITY MEASUREMENTS/

Authors
HUANG MF GARMIRE E HASENBERG T KOEHLER S
Citation
Mf. Huang et al., INAS GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN ON GAAS AS SPATIAL LIGHT MODULATORS - UNIFORMITY MEASUREMENTS/, Superlattices and microstructures, 21(2), 1997, pp. 165-176
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
21
Issue
2
Year of publication
1997
Pages
165 - 176
Database
ISI
SICI code
0749-6036(1997)21:2<165:IGSSSG>2.0.ZU;2-5
Abstract
Optical properties of two-dimensional transmission-type spatial light modulators using InAs/GaAs short-period strained-layer superlattices ( SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a simi lar to 200 pixellated wafer, i.e. the uniformity of the devices, are a nalyzed. The limits to performance of this spatial light modulator due to nonuniformity are also discussed. (C) 1997 Academic Press Limited