IMPURITY DIFFUSION IN A SEMICONDUCTOR IN 2 STATES DIFFERING IN-DIFFUSION COEFFICIENT AND IN THE DEGREE OF IONIZATION OF THE IMPURITY ATOMS

Citation
Ed. Gornushkina et Rs. Malkovich, IMPURITY DIFFUSION IN A SEMICONDUCTOR IN 2 STATES DIFFERING IN-DIFFUSION COEFFICIENT AND IN THE DEGREE OF IONIZATION OF THE IMPURITY ATOMS, Semiconductors, 29(5), 1995, pp. 471-478
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
29
Issue
5
Year of publication
1995
Pages
471 - 478
Database
ISI
SICI code
1063-7826(1995)29:5<471:IDIASI>2.0.ZU;2-J