TEMPERATURE AND STRAIN DEPENDENCE OF THE ROUGHENING TRANSITION IN III-V SEMICONDUCTOR AND SIGE EPITAXIAL-GROWTH

Authors
BANGERT U HARVEY AJ DIEKER C HARTDEGEN H VESCAN L SMITH A
Citation
U. Bangert et al., TEMPERATURE AND STRAIN DEPENDENCE OF THE ROUGHENING TRANSITION IN III-V SEMICONDUCTOR AND SIGE EPITAXIAL-GROWTH, Journal of applied physics, 78(2), 1995, pp. 811-816
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
2
Year of publication
1995
Pages
811 - 816
Database
ISI
SICI code
0021-8979(1995)78:2<811:TASDOT>2.0.ZU;2-Z