REDUCED TEMPERATURE GROWTH OF CRYSTALLINE 3C-SIC FILMS ON GH-SIC BY CHEMICAL-VAPOR-DEPOSITION FROM SILACYCLOBUTANE

Authors
YUAN C STECKL AJ CHAUDHURI J THOKALA R LOBODA MJ
Citation
C. Yuan et al., REDUCED TEMPERATURE GROWTH OF CRYSTALLINE 3C-SIC FILMS ON GH-SIC BY CHEMICAL-VAPOR-DEPOSITION FROM SILACYCLOBUTANE, Journal of applied physics, 78(2), 1995, pp. 1271-1273
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
2
Year of publication
1995
Pages
1271 - 1273
Database
ISI
SICI code
0021-8979(1995)78:2<1271:RTGOC3>2.0.ZU;2-Q