As part of the development necessary for implementing a fully digital
radiology department, the authors have investigated thin-film photodio
des and transistors for use in new photoelectronic imaging devices. On
e such device, a large-area, flat-panel, amorphous silicon imaging arr
ay, has been developed and is currently being tested. The array has a
format of 512 x 560 pixels, a pixel-to-pixel pitch of 450 mu m, and an
area of 230 x 252 mm(2), making it the largest self-scanning, solid-s
tate imaging array developed to date. The array is used in conjunction
with an overlying x-ray converter. Although specifically designed for
megavoltage imaging, the device can produce high-quality, low spatial
resolution, diagnostic x-ray images. Qualitative comparisons of array
images of anthropomorphic head, chest, and pelvic phantoms and a spat
ial resolution pattern suggest that much of the information content of
the film images at low spatial resolution is present in the correspon
ding array images. Current trends in the development of large-area, fl
at-panel imaging technology hold the promise of higher resolution arra
ys in the near future.