THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE

Authors
JONES AC HOULTON DJ RUSHWORTH SA FLANAGAN JA BROWN JR CRITCHLOW GW
Citation
Ac. Jones et al., THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE, Advanced materials, 7(7), 1995, pp. 24-26
Citations number
22
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
7
Issue
7
Year of publication
1995
Pages
24 - 26
Database
ISI
SICI code
0935-9648(1995)7:7<24:TDOATB>2.0.ZU;2-8
Abstract
Communication: Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe(2)AlH(Nme(2)Et) , has been used for the CVD of high purity aluminum in the temperature range 250-350 degrees C. In contrast to currently available precursor s it is a free flowing and non-pyrophoric liquid, making it less hazar dous and more convenient for use in CVD.