The Al-Si configuration in ordered and disordered lead feldspar (PbAl2
Si2O8) has been investigated by single-crystal X-ray diffraction. Sing
le crystals synthesized from melt and cooled from T = 1280 to 1000 deg
rees C in 1 h and then to T = 700 degrees C in 15 h show a completely
disordered Al-Si configuration with no b-type superstructure reflectio
ns (C2/m, a = 8.428, b = 13.054, c = 7.174 Angstrom, beta = 115.32 deg
rees; R = 5.8%). Subsequent structure refinement of a crystal hydrothe
rmally annealed at T = 500 degrees C and P-H2O = 2 kbar for 216 h show
s an ordered Al-Si configuration (I2/c, a = 8.388, b = 13.067, c = 14.
327 Angstrom, beta = 115.19 degrees; R = 4.7%; Q(od) approximate to 0.
9; 950 b reflections with F-o greater than or equal to 4 sigma). In th
e ordered lead feldspar the Pb polyhedron is significantly distorted i
n comparison with the Sr polyhedron in strontium feldspar. The coordin
ation of the Pb site is reduced from sevenfold, as in strontium feldsp
ar, to a rather irregular sixfold configuration. Such distortion could
be related to the lone-pair effect in Pb2+. In the disordered lead fe
ldspar the Fourier map shows an anomalous electron-density distributio
n around the Pb site and consequently a split-site model for Pb was as
sumed in the refinement (Pb-Pb' split = 0.557 Angstrom).