THE ELECTRONIC-STRUCTURE OF MODULATION-DOPED IN-0.53 GA0.47AS N-IN0.52AL0.48AS HETEROSTRUCTURE/

Authors
MAGDY MA ALKHADER RA TOMAK M
Citation
Ma. Magdy et al., THE ELECTRONIC-STRUCTURE OF MODULATION-DOPED IN-0.53 GA0.47AS N-IN0.52AL0.48AS HETEROSTRUCTURE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(4), 1995, pp. 357-364
Citations number
26
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
4
Year of publication
1995
Pages
357 - 364
Database
ISI
SICI code
0392-6737(1995)17:4<357:TEOMIG>2.0.ZU;2-F
Abstract
The subband structure of modulation-doped InGaAs/InAlAs heterostructur es is calculated in a variational self-consistent manner. The dependen ce on various device parameters is examined. The many-body exchange co rrelation effects are taken into account.