A FACILITY FOR MAPPING PHOTOLUMINESCENCE FROM SEMICONDUCTOR HETEROSTRUCTURES WITH SPECTRAL RESOLUTION

Using the parallel detection of photoluminescence spectra with a multi channel light detector, spectral parameters can be analyzed at each po int of a specimen structure and topograms of the integral intensity an d separate spectral lines can be plotted. The facility has been used t o characterize AlGaAs/GaAs heterostructures and to reveal the causes f or their lateral nonuniformity.