DISTRIBUTION OF CHARGE-CARRIER CONCENTRATION DERIVED FROM THE CURRENTOF AN ELECTROCHEMICAL REACTION IN GAAS-BASED STRUCTURES

Authors
KOLBASOV GY KOLMAKOVA TP VASKO AT TARANETS TA
Citation
Gy. Kolbasov et al., DISTRIBUTION OF CHARGE-CARRIER CONCENTRATION DERIVED FROM THE CURRENTOF AN ELECTROCHEMICAL REACTION IN GAAS-BASED STRUCTURES, Instruments and experimental techniques, 38(1), 1995, pp. 103-105
Citations number
8
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
38
Issue
1
Year of publication
1995
Part
2
Pages
103 - 105
Database
ISI
SICI code
0020-4412(1995)38:1<103:DOCCDF>2.0.ZU;2-#
Abstract
This paper describes a technique for measuring the distribution of car rier concentration in thin epitaxial GaAs structures from the current of the electro chemical reaction across the semiconductor-electrolyte interface at zero bending of energy bands, this is verified by measuri ng the current induced by strongly absorbed light. Structure layers ar e etched off either photoelectrochemically or chemically.