ELECTRONIC EFFECTS IN ION-STIMULATED DESORPTION OF POSITIVE HALOGEN IONS FROM SEMICONDUCTOR SURFACES

Energy distributions of ions emitted during either 6-10 keV O-2(+) or low-energy ( < 1 keV) electron bombardment have been studied for diffe rent ion species implanted into gallium arsenide. Some positive ions, such as F+ and Cl+, have been shown to exhibit close similarity betwee n ion-stimulated and electron-stimulated energy distributions indicati ng the dominance of electronic effects in ion-induced ejection of thes e ions. A tentative explanation based on an interatomic Auger process is given for the ion-stimulated ejection and results are correlated wi th measurements of the positive secondary ion yield dependence on ioni zation potential.