ESD AND ION ANGULAR-DISTRIBUTIONS OF POSITIVE AND NEGATIVE CHLORINE IONS FROM THE SILICON(100) CHLORINE INTERFACE/

Authors
STERRATT D GUO Q WILLIAMS EM
Citation
D. Sterratt et al., ESD AND ION ANGULAR-DISTRIBUTIONS OF POSITIVE AND NEGATIVE CHLORINE IONS FROM THE SILICON(100) CHLORINE INTERFACE/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(1-2), 1995, pp. 84-87
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
101
Issue
1-2
Year of publication
1995
Pages
84 - 87
Database
ISI
SICI code
0168-583X(1995)101:1-2<84:EAIAOP>2.0.ZU;2-B
Abstract
Parameters of electron stimulated desorption of positive and negative chlorine ions at the Si(100)/Cl interface have been studied with chlor ine coverages up to around one monolayer and with electron energies up to 400 eV. Ion angular distributions of Cl- ions show a dominance of emission normal to the surface in contrast to Cl+ ion patterns which i ncorporate off-normal beams. The evidence points to the role of a dipo lar dissociation process at defect (missing atom) sites in negative io n formation.