EFFECTS OF THICKNESS AND CALCINATION TEMPERATURE ON TIN DIOXIDE SOL-DERIVED THIN-FILM SENSOR

Citation
Dj. Yoo et al., EFFECTS OF THICKNESS AND CALCINATION TEMPERATURE ON TIN DIOXIDE SOL-DERIVED THIN-FILM SENSOR, Journal of the Electrochemical Society, 142(7), 1995, pp. 105-107
Citations number
12
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
142
Issue
7
Year of publication
1995
Pages
105 - 107
Database
ISI
SICI code
0013-4651(1995)142:7<105:EOTACT>2.0.ZU;2-B
Abstract
The grain size of SnO2 (D) in the thin films prepared from SnO2 sol so lution decreased with decreasing film thickness when calcined at eleva ted temperature (800 degrees C). Because of this notable phenomenon, t he resistivity and H2S sensitivity of the films showed rather complex dependence on film thickness and calcination temperature. These charac teristics could be reduced into either of two simple functions of D, d epending on whether the calcination temperature was lower (400 degrees C, 600 degrees C) or higher (800 degrees C).