Dj. Yoo et al., EFFECTS OF THICKNESS AND CALCINATION TEMPERATURE ON TIN DIOXIDE SOL-DERIVED THIN-FILM SENSOR, Journal of the Electrochemical Society, 142(7), 1995, pp. 105-107
The grain size of SnO2 (D) in the thin films prepared from SnO2 sol so
lution decreased with decreasing film thickness when calcined at eleva
ted temperature (800 degrees C). Because of this notable phenomenon, t
he resistivity and H2S sensitivity of the films showed rather complex
dependence on film thickness and calcination temperature. These charac
teristics could be reduced into either of two simple functions of D, d
epending on whether the calcination temperature was lower (400 degrees
C, 600 degrees C) or higher (800 degrees C).