GROWTH AND XPS CHARACTERIZATION OF ANODIC TELLURIDE FILMS ON HG1-XCDXTE

Authors
JAIN M NENER BD WARRINGTON N BAKER MV ROBINS JL FARAONE L
Citation
M. Jain et al., GROWTH AND XPS CHARACTERIZATION OF ANODIC TELLURIDE FILMS ON HG1-XCDXTE, Journal of the Electrochemical Society, 142(7), 1995, pp. 2480-2485
Citations number
36
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
7
Year of publication
1995
Pages
2480 - 2485
Database
ISI
SICI code
0013-4651(1995)142:7<2480:GAXCOA>2.0.ZU;2-O
Abstract
An anodic tellurization process to grow native telluride films on Hg1- xCdxTe is described. This process requires two steps: first the growth of an anodic sulfide/oxide film and second the conversion of this fil m into an anodic telluride film. XPS studies suggest that the total co nversion of the anodic sulfide/oxide film into an anodic telluride fil m is possible. The concentration of tellurium in the anodically grown telluride films can be controlled by controlling the concentration of sulfur and oxygen in the starting film.