RANGES IN SI AND LIGHTER MONO AND MULTIELEMENT TARGETS

In the present review we describe experimental range studies for ions implanted into Si and lighter mono and multi-element targets. The expe rimental results are compared with current theories, in particular wit h the Ziegler, Biersack and Littmark (ZBL) calculations. It is found t hat for Si targets at implanted energies from 10 to 390 keV and for a large set of ion-Si combinations (29 less than or equal to Z(1) less t han or equal to 83) there is overall a good agreement (better than 10% ) between the experimental data and the ZBL calculations. However, for Au, Yb and Eu, significant theoretical-experimental differences are f ound when these ions are implanted at energies lower than 70 keV. The disagreement is removed when a cut-off in the interatomic potential is performed. On the other hand, systematic range studies performed in C , B, Be, SiC and polymer target films have shown that whenever medium- heavy ions are implanted in an energy range of 10 keV-7.5 MeV the expe rimental data are underestimated by the theory by as much as 40%. Usin g a simple model which takes into account the influence of the inelast ic collisions on the nuclear stopping power this last difference is re moved and a very good agreement is achieved between the calculated and experimental results. Finally the status for H, B and Li deep implant s into Si at energies where the electronic stopping power reaches its maximum, is also reviewed.