METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER USING HYDRATED COPPER FORMATE AS A NEW PRECURSOR

Copper films were obtained by metal-organic chemical vapour deposition using hydrated copper formate. The films were deposited on Si(100) an d sputtered TiN/Si(100) 4-in wafers, at substrate temperatures of abou t 300 degrees C, with a reducing or inert carrier gas. Results from X- ray diffraction and X-ray photoelectron spectroscopy indicated a pure, crystalline and oxygen-free copper. Different film morphologies were observed by scanning electron microscopy: both continuous films and in homogeneous films with copper crystallites monodirectionally oriented were observed. In situ mass-spectroscopy analysis allows the proposal of some reaction mechanisms and highlights the importance of the initi al hydration level of the precursor on the nucleation rate.